Controllable physicochemical properties of WO_x thin films grown under glancing angle

• Rupam Mandal,
• Aparajita Mandal,
• Alapan Dutta,
• Rengasamy Sivakumar,
• Sanjeev Kumar Srivastava and
• Tapobrata Som

Beilstein J. Nanotechnol. 2024, 15, 350–359, doi:10.3762/bjnano.15.31

• sputtering for optoelectronic applications. A glancing angle of 87° is employed to grow films of different thicknesses, which are then exposed to post-growth annealing. Detailed local probe analyses in terms of morphology and work function of WOx films are carried out to investigate thickness-dependent

• structural, optical, and electrical properties of glancing angle-deposited NS-WOx thin films, where NS-WOx films of different thicknesses (6–60 nm) are prepared by rf sputtering and exposed to post-growth annealing at 673 K in vacuum (2 × 10−7 mbar). The role of increased oxygen vacancy concentration (OV) on

• duration of 1200 s to achieve stability in depositions and contamination-free films. A constant substrate rotation (10 rpm) was maintained to achieve uniform WOx films. Post-growth annealing of all WOx films (grown under the same conditions) was performed at 673 K for 60 min in a vacuum environment (3 × 10

Hybridization vs decoupling: influence of an h-BN interlayer on the physical properties of a lander-type molecule on Ni(111)

• Maximilian Schaal,
• Takumi Aihara,
• Marco Gruenewald,
• Felix Otto,
• Jari Domke,
• Roman Forker,
• Hiroyuki Yoshida and
• Torsten Fritz

Beilstein J. Nanotechnol. 2020, 11, 1168–1177, doi:10.3762/bjnano.11.101

• LEED pattern due to a post-growth annealing process in a temperature range from 100 °C to 300 °C was not visible. In fact, at a temperature of 300 °C the desorption of DBP molecules was observed by a decrease of the C 1s intensity measured by XPS (not shown). Therefore, we conclude that a post-growth

• annealing process does not lead to an increase of the lateral order. However, a highly ordered film was achieved by depositing at a substrate temperature of 170 °C. The LEED image in Figure 3a shows the corresponding diffraction pattern induced by a highly ordered molecular film. For this reason, we labeled

Comparative study of post-growth annealing of Cu(hfac)₂, Co₂(CO)₈ and Me₂Au(acac) metal precursors deposited by FEBID

• Marcos V. Puydinger dos Santos,
• Aleksandra Szkudlarek,
• Artur Rydosz,
• Carlos Guerra-Nuñez,
• Fanny Béron,
• Kleber R. Pirota,
• Stanislav Moshkalev,
• José Alexandre Diniz and
• Ivo Utke

Beilstein J. Nanotechnol. 2018, 9, 91–101, doi:10.3762/bjnano.9.11

• , the post-growth annealing results differed. Cu-containing deposits showed the formation of pure Cu nanocrystals at the outer surface of the initial deposit for temperatures above 100 °C, due to the migration of Cu atoms from the carbonaceous matrix containing carbon, oxygen, and fluorine atoms. The

• relatively simple vacuum-based post-growth annealing protocol may be useful for other precursors as it proved to be efficient in reliably tuning the electrical properties of as-deposited FEBID materials. Finally, a H2-assisted gold purification protocol is demonstrated at temperatures around 300 °C by fully

• removing the carbon matrix and drastically reducing the electrical resistance of the deposit. Keywords: copper; gold; cobalt; focused-electron-beam-induced deposition; noble metal; non-noble metals; post-growth annealing; Introduction Focused-electron-beam-induced deposition (FEBID) constitutes a well

Correction: Formation of pure Cu nanocrystals upon post-growth annealing of Cu–C material obtained from focused electron beam induced deposition: comparison of different methods

• Aleksandra Szkudlarek,
• Alfredo Rodrigues Vaz,
• Yucheng Zhang,
• Andrzej Rudkowski,
• Czesław Kapusta,
• Rolf Erni,
• Stanislav Moshkalev and
• Ivo Utke

Beilstein J. Nanotechnol. 2015, 6, 1935–1936, doi:10.3762/bjnano.6.196

• nanocrystals; focused electron beam induced deposition (FEBID); post-growth annealing of Cu–C material; In Figure 8 of the original article, the scale of the ordinate was wrong. The correct figure looks as follows: Figure 8 in the original article: Calculated resistivity from the resistance measurement of a

Formation of pure Cu nanocrystals upon post-growth annealing of Cu–C material obtained from focused electron beam induced deposition: comparison of different methods

• Aleksandra Szkudlarek,
• Alfredo Rodrigues Vaz,
• Yucheng Zhang,
• Andrzej Rudkowski,
• Czesław Kapusta,
• Rolf Erni,
• Stanislav Moshkalev and
• Ivo Utke

Beilstein J. Nanotechnol. 2015, 6, 1508–1517, doi:10.3762/bjnano.6.156

• study in detail the post-growth annealing of a copper-containing material deposited with focused electron beam induced deposition (FEBID). The organometallic precursor Cu(II)(hfac)2 was used for deposition and the results were compared to that of compared to earlier experiments with (hfac)Cu(I)(VTMS

• conventionally and by laser-induced heating in the scanning electron microscope chamber. Keywords: Cu(hfac)2; Cu nanocrystals; focused electron beam induced deposition (FEBID); post-growth annealing of Cu–C material; Introduction Focused electron beam induced deposition (FEBID) is a direct maskless

• improvement of one order of magnitude was found [29]. Conventional post-growth annealing of FEBID material in vacuum was summarized in a review by Botman et al. [30]: The thermal energy which is delivered to the sample can cause a desorption of carbonaceous fragments increasing the metal concentration from 15

Morphology, structural properties and reducibility of size-selected CeO_2−x nanoparticle films

• Maria Chiara Spadaro,
• Sergio D’Addato,
• Gabriele Gasperi,
• Francesco Benedetti,
• Paola Luches,
• Vincenzo Grillo,
• Giovanni Bertoni and
• Sergio Valeri

Beilstein J. Nanotechnol. 2015, 6, 60–67, doi:10.3762/bjnano.6.7

• deposition in pO2 = 1·10−7 mbar at room temperature and post-growth annealing at T = 1040 K under the same O2 partial pressure. A non-epitaxial cerium oxide film grown on Pt(111) with nominal thickness t = 2 ML, was obtained with the same procedures as the epitaxial film, without the post-growth annealing in